Home to North America’s First Accessible High NA EUV Lithography Center
NY Creates’ NanoFab Reflection is a state-of-the-art fabrication facility, and the home to the nation’s first non-profit owned High NA EUV Center, delivering the world’s most advanced chip research and development capabilities and accelerating the future of semiconductor technologies. This cutting-edge facility is taking shape as a 310,000-square-foot R&D hub, designed to meet the growing global demand for next-generation chip technologies. Backed by significant public and private funds, the NanoFab Reflection and High NA EUV Lithography initiative underscores NY Creates’ continued commitment to advancing leading-edge R&D, bolstering workforce development throughout the region, and driving economic advancement for New York State.
The Role of EUV Lithography in Sub-2nm Technology Development
NanoFab Reflection features a 50,000-square-foot cleanroom space with temperature-controlled environments, supporting the strictest requirements of air filtration, where even microscopic particles can impact performance. The building itself has been engineered to accommodate the immense size and sensitivity of next-generation tools, including specialized structural reinforcements and advanced air handling systems that meet the stringent requirements for the reduction of the tiniest particles that could interfere with the chip fabrication process.
At the core of NanoFab Reflection’s purpose is Creates’ High Numerical Aperture (NA) Extreme Ultraviolet (EUV) Lithography Center. North America’s first and only non-profit owned R&D center, which will also utilize High NA EUV Lithography to drive sub-2nm technology development. Central to this effort is ASML’s High NA EUV system, a transformative tool capable of patterning atomic-scale features essential for the world’s most advanced microchips. This capability positions Albany as a global epicenter for semiconductor R&D, enabling breakthroughs in artificial intelligence, high-performance computing, and advanced electronics.
Powering the Future of Semiconductor Innovation
Beyond its physical footprint, NanoFab Reflection is a catalyst for revolutionary innovations and strengthening global partnerships. As the future home of the EUV Lithography Center and the cornerstone of Governor Hochul’s $1 billion investment in NY Creates’ Albany NanoTech Complex, leveraging $9 billion in industry investment, this groundbreaking facility supports New York State’s strategy to bolster America’s semiconductor leadership. This investment also enables shared access to tools, expertise, and research, strengthening the U.S. semiconductor supply chain in an increasingly competitive global landscape.
The significance of this revolutionary facility has already drawn national and regional attention. In a recent feature, the Times Union offered a rare behind-the-scenes tour of NanoFab Reflection in its article, “First look inside NanoFab Reflection, a computer chip behemoth at Albany NanoTech,” describing the experience as stepping into “a new dimension” defined by scale, complexity, and technological ambition. This highlights not only the physical magnitude of the project but also the excitement surrounding its potential to reshape the future of the semiconductor industry.
As construction progresses toward completion in 2026, NanoFab Reflection stands as more than just a next-generation facility; it is a symbol of what is possible through strategic investments, visionary leadership, and sustained partnerships.
With the High NA EUV Lithography Center expanding capabilities at the Albany NanoTech Complex, NY Creates is ensuring that New York and the U.S. remain at the forefront of semiconductor innovation far into the future.
