NYS leaders and Cree, Inc. announce plans to invest approximately $1 billion over six years to construct and equip a new, state-of-the-art, 200 mm silicon carbide wafer fabrication facility

Cree, Inc., the global leader in silicon carbide technology, will construct and equip the world’s-first 200 mm silicon carbide wafer fabrication facility at the Marcy Nanocenter on the SUNY Polytechnic Institute campus near Utica. While construction is underway, Cree will lease space at NY CREATES, where the company will utilize equipment purchased as part of the New York Power Electronics Manufacturing Consortium (NY-PEMC) to transition from the current process of producing devices on 150 mm silicon carbide wafers to producing devices on 200 mm silicon carbide wafers.