Wafer Scale Heterogeneous Integration of GaN with CMOS
August 27th (Thursday), 2020
11:30 am – 12:30 pm (Eastern Time)
Abstract
Gallium nitride (GaN) analog monolithic microwave integrated circuits (MMICs) have superior output power density and linearity relative to both silicon (Si) CMOS and silicon germanium (SiGe) integrated circuits (ICs). As a result, heterogeneous integration (HI) of GaN MMICs with CMOS is an attractive approach for lattice spacing constrained, digital-beamforming (DBF), millimeter-wave phased arrays. However, the yields of current die to wafer approaches are limited by GaN die processed using traditional III-V foundry techniques. To address this, Raytheon is developing a silicon foundry based GaN MMICs process on 200mm Si and heterogeneously integrating it at the wafer scale with 200mm silicon-on-insulator (SOI) CMOS. Experimental results utilizing this heterogeneously integrated MMIC (HIMMIC) approach are presented.
Biography
Dr. Jeffrey LaRoche is a Program Capture Manager for Raytheon Missiles and Defense (RMD) Advanced Technology Programs (ATP) group. Jeff received his B.S. in Chemical Engineering from Worcester Polytechnic Institute in 1996, and his Ph.D. in Chemical Engineering from the University of Florida in 2000. His primary area of expertise is InP-like MHEMTs and GaN HEMTs for high frequency applications. In particular, over the last fifteen years, his work has been focused on heterogeneous integration of III-Vs with CMOS. The work included escalating levels of responsibility in Raytheon’s DARPA COSMOS, DARPA GaN-CMOS Advanced Study, DARPA DAHI, and IR&D programs. Currently Jeff is the program manager responsible for Raytheon’s 200 mm GaN-on-Si microstrip MMIC process for Raytheon. This microwave and millimeter wave process is suitable for standalone high frequency MMIC applications, and for heterogeneous integration with Si CMOS, SiGe BiCMOS and other III-Vs. This technology is a key enabler for advanced defense and commercial phased array applications such as radar and communications (e.g. 5G and IOT).
