Skip to content

Dr. Mustafa Pinarbasi, Spin Memory

Dr. Mustafa Pinarbasi, Spin Memory

Spin Transfer Torque Magnetic Random Access Memory Technology and Applications

October 29, (Thursday) 2020, 11:30 am – 12:30 pm (EST)

Abstract

Spin Transfer Torque MRAM (STT-MRAM) is the emerging non-volatile memory technology.  Development of the current STT-MRAM technology is the result of the significant effort that has taken place in the Spintronics field during the past three decades.  STT-MRAM technology has critical advantages over other memory technologies with its non-volatility, fast write and read operation, low power requirements, scalability, and easy integration to CMOS processing.  STT-MRAM process integration requires 2 to 4 additional mask steps and is already in high volume manufacturing in CMOS logic.  Magnetic tunnel junction (MTJ) is at the heart of the STT-MRAM technology.  MTJ’s can be designed with a wide variety of parameters and these parameters must be carefully optimized for different applications and product requirements.  For example write current and stability of the storage layer are directly coupled leading to undesirable tradeoffs between endurance and retention.  These topics and the specific Spin Memory technologies that address these tradeoffs will be discussed.

Biography

Dr. Mustafa Pinarbasi is the CTO and Sr. VP of Magnetics Technology at Spin Memory (previously Spin Transfer Technologies).  He has led the building of the state-of-the-art MRAM process development facility as well as the development of the perpendicular magnetic tunnel junction structures and processing for MRAM applications at Spin Memory.  Before joining Spin Memory in 2013, Dr. Pinarbasi was a CTO and Sr. VP of Technology Development at SoloPower, Advanced Technology Department Manager at Hitachi GST and Distinguished Engineer at IBM.  He joined IBM in 1989 and spent the first 18 years of his career at IBM and HGST (formerly IBM, now part of Western Digital) as a leading technologist in read sensors for hard disk drives (HDD).  At IBM, his accomplishments included the development of the giant magneto-resistance sensor (GMR) that was used in the first GMR based HDD’s in the World.  The use of GMR read sensors in HDD marked the first utilization of spintronic device for mass production.  He led the development of tunneling magneto-resistance (TMR) read head processing at Hitachi GST and flexible solar panel development at SoloPower.  Dr. Pinarbasi holds a Ph.D. in Materials Science and Engineering from the University of Illinois at Urbana-Champaign. He is an inventor with over 200 U.S. patents, has authored or co-authored over 35 scientific publications and has received numerous industry awards.