Versatile MRAM Technology for Industrial and Data Center Applications
February 10 (Thursday), 2022
11:30 am to 12:30 pm (EST)
Virtual via Zoom
Abstract: Magnetoresistive random access memory (MRAM) technology is gaining traction in the market and being used in an increasing number of applications including data centers, industrial products, wearable devices, or aerospace. Successful adoption of an emerging memory product requires careful co-optimization of the technology and circuit design. We will review the evolution of MRAM technology from field based, Toggle-MRAM to Spin Transfer Torque, STT-MRAM. This presentation will introduce the next generation of Everspin’s STT-MRAM technology optimized for high speed reliable switching, low-latency industrial applications with data retention of > 10 years at 105°C and endurance of > 1e15 cycles at -40°C.
Biography: Dr. Sanjeev Aggarwal serves as the CTO of Everspin, driving technical developments for MRAM both internally and externally. He is also the VP of Operations and Technology, leading internal operations activities across all product technologies. Before joining Everspin in 2008, he was Senior Member of Technical Staff at Freescale Semiconductor, leading a team to develop and integrate Toggle and STT-MRAM on CMOS. Prior to that, he was at Texas Instruments, contributing to its R&D program on ferroelectric RAM. His technical contributions include over 100 patents, over 100 publications and invited presentations. He holds a doctorate in Materials Science from Cornell University.