NY Creates
Extreme Ultraviolet Lithography Center
Creates EUV Center offers standard NA, and soon, High NA EUV lithography capabilities that don’t exist anywhere else in the world within an accessible semiconductor R&D ecosystem.
NY Creates
Extreme Ultraviolet Lithography Center
NY CREATES EUV Center offers standard NA, and soon, High NA EUV lithography capabilities that don’t exist anywhere else in the world within an accessible semiconductor R&D ecosystem.
Creates’ EUV Lithography Center features:
Creates High NA EUV Lithography Center
In partnership with industry leaders, including IBM, Micron, Applied Materials, Tokyo Electron, and others, Creates’ High NA EUV Lithography Center will:
The High NA EUV Lithography Center is based at Creates’ Albany NanoTech Complex, North America’s largest and most advanced 300mm semiconductor R&D facility. Key capabilities—including some of the most innovative High NA EUV technology ever produced—ASML’s TWINSCAN EXE:5200B—will be leveraged inside NY CREATES’ accessible, new NanoFab Reflection (NFR) building.
NFR features 50,000 sq. ft. of state-of-the-art cleanroom space—complementing the existing advanced EUV capabilities at Creates, encouraging partner growth and supporting critical initiatives.
Creates’ Albany NanoTech Complex has:
- Nation-leading semiconductor infrastructure and R&D capabilities
- A proven track record of semiconductor breakthroughs and first-ever quantum photonic chips
- Extensive partnerships with industry leaders, academic institutions, and government agencies
- A highly skilled workforce and expertise in semiconductor innovation
- Accessible standard NA EUV capabilities right now, and High NA EUV capabilities in 2026
Creates and industry partners are committed to integrating sustainability into the construction and operation of the High NA EUV Lithography Center, including in fab design, materials use, waste reuse, and sustainable fabrication processes.
What is EUV technology?
The Science Behind the Fabrication of Next-Gen Chips
Extreme ultraviolet (EUV) lithography uses EUV light to print the most complex, intricate layers on microchips. The EUV light has a wavelength of 13.5nm, which is near X-ray range. Creates offers this capability now as part of its EUV Lithography Center’s offerings.
How does High NA EUV work?
Numerical aperture (NA) is the measure of how finely a lithography system can focus light—higher NA means better resolution and smaller features. The NA for High NA EUV lithography is 0.55, which is considerably larger than the previous EUV generation’s 0.33. This means light from a wider angular range can be used for imaging. A High NA EUV tool focuses laser-driven plasma light through precision optics, enabling smaller and more complex chip features, ultimately leading to chips with greater computing power which simultaneously consume less energy.
Benefits of High NA EUV over traditional EUV:
- Enhanced imaging resolution for next-gen chips
- Improved chip functionality, performance, and energy efficiency
- Key enabler for sub-2nm logic and advanced memory
- Helps meet growing global demand for AI, mobile, and defense tech
Fun facts about the new High NA EUV tool:
To provide an idea of the technological scale, a 2nm chip the size of your fingernail is composed of 50 billion transistors, or on-off switches. High NA EUV will push the boundaries even further.