Aluminum Nitride Based Photonics
In partnership with RIT (Prof. Preble & Dr. Serafini) and AFRL (Dr. Fanto), NY CREATES has been working to enable AlN-based photonic integrated circuits that can be used to interface with trapped ion qubits through grating couplers and other I/O structures operating at visible and ultraviolet wavelengths. AlN also has electro-optic effect that can be utilized to fabricate modulators. The team has worked on a chip design with fabrication and characterization to be completed this year. The loss characteristics of AlN waveguides and the efficiency of modulation are among the metrics that will be determined.